产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 80 V, 0.077 ohm, 10 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 0.003 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 300 V, 400 mohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, 1A SOT-223
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 500 mA, 20 V, 0.99 ohm, 8 V, 1.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 1.2A
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7.2 A, 40 V, 50 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 60 V, 0.0037 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)VISHAY
场效应管, MOSFET, P沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -12V, 0.014OHM, -10A, MICROFET-6
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 6.5 mohm, 10 V, 3 V
(EN)
