产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -60 V, 0.077 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -25 A, -60 V, 0.033 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 25V, 750mA, SOT-323
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.1 A, 150 V, 0.057 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 130 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 147 A, 30 V, 0.00152 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0023 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 334 A, 25 V, 0.056 ohm, 10 V, 2.1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 19.3A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 330 A, 40 V, 0.0006 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 150 V, 0.015 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -12 V, 40 mohm, -4.5 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.013 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0016 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 30 V, 0.0026 ohm, 11.5 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 A, 40 V, 0.00085 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.0034 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 73 A, 30 V, 4.26 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 300 A, 25 V, 0.00057 ohm, 10 V, 1.66 V
(EN)
