产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 1.1 ohm, 10 V, 1.75 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -60 V, 0.012 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 14A, IPAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 30 V, 0.08 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.0056 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 115mA SOT-23
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.25 A, -60 V, 170 mohm, -10 V, 20 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 1.3A SOT-23
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.21 ohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 80 V, 0.0275 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 60 V, 0.356 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 6.9 mohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.122 ohm, -4.5 V, -900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.077 ohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 100 V, 0.4 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.178 ohm, 10 V, 2.5 V
(EN)
