产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 27 mohm, -4.5 V, -700 mV
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 3.4A, 3-SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道, -8V, 1.6A, SC-70
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 80 V, 16.5 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, N沟道
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -6A, SOT-23-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 12.2 mohm, 10 V, 1.85 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 500 V, 0.43 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -7.3 A, -30 V, 0.013 ohm, -20 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7 A, 100 V, 0.019 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 154 mA, 30 V, 1.4 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0059 ohm, 8 V, 1.3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -30V, 8.8A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0103 ohm, 10 V, 4.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.262 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, 8-SOIC
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V
(EN)
