产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 800 mohm, -10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 250 mohm, -10 V, -2.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.015 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 40 V, 0.002 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.21 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 100 mA, 450 V, 60 ohm, 0 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.0236 ohm, 4.5 V, 810 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 65 A, 30 V, 4.92 mohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)
MICROCHIP
MOSFET, N CHANNEL, 300V, 0.2A, TO-243AA-3
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14 A, 25 V, 0.0704 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
(EN)
