产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 250 V, 0.9 ohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)
VISHAY
场效应管, P沟道, MOSFET, -100V, 28A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0011 ohm, 10 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0063 ohm, 10 V, 2.9 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 450 mA, -60 V, 5 ohm, -10 V, -3.5 V
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 7 A, 40 V, 50 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.042 ohm, 4.5 V, 650 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 276 A, 60 V, 0.00093 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, HEXDIP
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.0032 ohm, 10 V, 1.1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.041 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.02 ohm, 10 V, 2.9 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -15A, -20V, 8-SOIC
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 4A, TO-236
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.4 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)
