产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 400 V, 550 mohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.082 ohm, 10 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 3.8A SOT-223
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 11.1 A, 100 V, 0.017 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 13 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12.5 A, 80 V, 13.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.35 ohm, 13 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 14.5A, TO220AB-3
(EN)
RENESAS
晶体管, MOSFET, N沟道, 40 A, 60 V, 4.5 mohm, 10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19.4 A, 200 V, 120 mohm, 10 V, 5 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 30 mA, 500 V, 850 ohm, 0 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19.7 A, -30 V, 8.1 mohm, -10 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 250V, 0.077OHM, 33A, TO-263-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 5.1 mohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -140 mA, -20 V, 8 ohm, -4.5 V, 900 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.22 ohm, 10 V, 5 V
(EN)
