产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, 4.5 V, 900 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO-220FP-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0024OHM, 42A, POWER 56-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.026 ohm, -4.5 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0029 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 25A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 400 V, 0.24 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.58 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 15 A, -20 V, 8.2 mohm, 4.5 V, 1.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 600 mA, 450 V, 3.2 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO220AB-3
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 285mA, SOT-723
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, TO-220, 18A, 200V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 135 mA, 350 V, 35 ohm, 0 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 500V, 14.5A, TO-220FP-3
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 42A, D2-PAK
(EN)
VISHAY
MOSFET, N CHANNEL, 100V, 4.3A, TO-252-3
(EN)
