产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
场效应管, MOSFET
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 500 mA, 400 V, 17 ohm, 0 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 14A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2.7 A, 40 V, 0.064 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -40 V, 0.0075 ohm, -10 V, -3 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 100 V, 0.161 ohm, 10 V, 1.6 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -5.6A, TO-252-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0071 ohm, 10 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.7 A, 12 V, 0.036 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.2 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 300 V, 160 mohm, 10 V, 5 V
(EN)
