产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.6 A, -20 V, 0.036 ohm, -700 mV, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.7 A, -200 V, 1.1 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -420 mA, -150 V, 2.05 ohm, -6 V, -4.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -400 V, 7 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -30 A, -40 V, 0.019 ohm, -10 V, -2.6 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 60 V, 450 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.057 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 600 mA, 450 V, 3.2 ohm, 10 V, 3.75 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 3 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 362 A, 40 V, 0.0007 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.049 ohm, 10 V, 3.2 V
(EN)
STMICROELECTRONICS
N CHANNEL MOSFET, 200V, 9A, TO-220
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.14 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 400 V, 270 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 19A, TO-220
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -2.7A, SOT-363-6
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 100 V, 700 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 230 mA, -100 V, 8 ohm, -10 V, -3.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)
