产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 38 mohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 200 mA, -240 V, 15 ohm, -10 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0034 ohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 20V, 40A, 8-PQFN
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 87 A, 30 V, 6.4 mohm, 8 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 500 V, 265 mohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.22 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 23 A, 600 V, 0.132 ohm, 10 V, 3.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4.2 ohm, 10 V, 1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.9 A, 150 V, 0.04 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
