产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -20 V, 0.0265 ohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 45 mohm, 10 V, 2.4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, SOIC
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 60 mohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0126 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 250V, 3.8A, TO-252-3
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.23 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.1 A, 500 V, 3 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 200 V, 0.29 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0064 ohm, -4.5 V, -500 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 900 mA, 100 V, 650 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 24 mohm, 4.5 V, 820 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
VISHAY
晶体管, MOSFET, P沟道, -5.6 A, -100 V, 0.6 ohm, -10 V, -4 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 2.1W, SOT-223
(EN)
