产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.4 A, 250 V, 0.33 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -20 V, 47 mohm, -4.5 V, -600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0041 ohm, 4.5 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 50 V, 100 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 200 V, 140 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.5 A, 400 V, 0.43 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 40 V, 0.0074 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -140 mA, -250 V, 8 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -400 V, 2.44 ohm, -10 V, -5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0158 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 26 A, 200 V, 0.021 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 6.7 mohm, 10 V, 1 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 360 mA, 250 V, 6 ohm, 0 V
VISHAY
MOSFET, N CHANNEL, 60V, 14A, TO-252-3
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 5 A, 60 V, 100 mohm, 10 V, 2.5 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.075 ohm, 4.5 V, 500 mV
(EN)
VISHAY
P CHANNEL MOSFET, -30V, 12.6A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 30 V, 10.5 mohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
(EN)
