产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 15 A, 60 V, 0.0139 ohm, 10 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 μohm, 10 V, 1.2 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -13.2A, POWERPAK 1212-8
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3 A, -150 V, 0.073 ohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 7.7A, IPAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0051 ohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12.9 A, 60 V, 0.034 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 100 A, 500 V, 0.043 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40V, 19A, SOIC-8TRA
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -7.8A, -20V, MicroFET
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.036 ohm, -10 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0086 ohm, -10 V, -1.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 0.0285 ohm, -4.5 V, -400 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 7.6A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4 A, 55 V, 75 mohm, 10 V, 4 V
(EN)
