产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 225 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.177 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 21A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -30 V, 0.094 ohm, -10 V, -1.87 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 35 A, 40 V, 0.0063 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.046 ohm, 10 V, 1.7 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -8A, TSOP-6
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.023 ohm, -1.8 V, -900 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, 3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 40 V, 8.5 mohm, 20 V, 1.9 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 17 A, 30 V, 7.8 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.65 ohm, 10 V, 2 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 19A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.0363 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 60 V, 0.047 ohm, 10 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.5Ω, -350mA, SC-89-3
(EN)
