产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.005 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 500 V, 0.47 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.6 A, 560 V, 0.5 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 790 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -1.8A, SOT-223-4
(EN)VISHAY
晶体管, MOSFET, N沟道, 23 A, 500 V, 235 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.022 ohm, -4.5 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)SEMELAB
晶体管, MOSFET, P沟道, 8 A, -160 V, 1.5 ohm, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 20 V, 0.0225 ohm, 10 V, 600 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.031 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 8.7A, POWERPAK 1212
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 4.1A, TSOP
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 191A, DFN5
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 100 V, 0.0064 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 50V, 30A, TO-220AB
(EN)
