产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N沟道, 200V, 2.6A, POWERPAK
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0076Ω, 100A, TO-220-3
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 300 V, 0.033 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
MICROCHIP
晶体管, MOSFET, N沟道, 136 mA, 450 V, 20 ohm, 0 V
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 40 V, 0.0047 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 93 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.07 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0011 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 560 V, 0.85 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V
(EN)
NEXPERIA
场效应管, N通道, DMOS FET, 20V, 1.05A, 3-SOT-2
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 2.3 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 3 mohm, 10 V, 1.8 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 180 mA, 200 V, 10 ohm, 5 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18.4 A, 100 V, 0.0073 ohm, 10 V, 1.5 V
(EN)
