产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 46 A, 200 V, 0.055 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 300 V, 0.047 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0055 ohm, 10 V, 1.9 V
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 4.2 A, 20 V, 0.09 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.9 A, 60 V, 0.09 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.5 A, 30 V, 10 mohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.162 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 150 V, 80 mohm, 10 V, 4.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.05 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19.4 A, 200 V, 0.12 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 23 A, 600 V, 0.132 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
(EN)ROHM
晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 400 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 250 V, 49 mohm, 10 V, 5 V
(EN)
