产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 80V, 30A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11.1 A, 500 V, 0.45 ohm, 13 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0016 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 26 A, 150 V, 0.036 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.7 ohm, 10 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 500 V, 0.125 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
(EN)
VISHAY
N CHANNEL MOSFET, 25V, 50A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 830 μohm, 10 V, 1.1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.5 ohm, 10 V, 3.75 V
(EN)
VISHAY
MOSFET, N CHANNEL, 500V, 2.4A, TO-252-3
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 13.7A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 830 mA, 250 V, 1.38 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.028 ohm, -4.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 30V, 1.9A, 3-SOT-23
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.1 A, 250 V, 0.45 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 100A, 0.0025Ω, SON-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.031 ohm, 10 V, 1 V
(EN)
