产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -600 mA, -20 V, 0.7 ohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.4 A, -30 V, 0.014 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 13A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.34 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.025 ohm, -4.5 V, -400 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.4 A, 100 V, 39 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.13 A, -30 V, 0.155 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 250 V, 40 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.4 A, 30 V, 35 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 25W, D-PAK
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 100 A, 500 V, 49 mohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 7.7 A, 100 V, 270 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.4 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 98 mohm, 4.5 V, 1.5 V
(EN)
