产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 400 V, 0.85 ohm, 10 V, 3 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.173 ohm, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 13A, D-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.5 A, 20 V, 0.036 ohm, 4.5 V, 850 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 340 mohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
(EN)
TEXAS INSTRUMENTS
N CHANNEL MOSFET, 25V, 60A, SON
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, CoolMOS, N沟道, 52 A, 500 V, 0.06 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 100 V, 22 mohm, 10 V, 4 V
(EN)
SOLID STATE
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7 A, 20 V, 0.019 ohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -260 mA, -250 V, 7.5 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -30 V, 48 mohm, -10 V, -1.8 V
(EN)
