产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 250 V, 94 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.03 ohm, -10 V, -1.8 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 500 V, 120 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.007 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 11A, D-PAK
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 7.5A, 1206
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 36 A, 500 V, 0.105 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 32 A, 560 V, 110 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 10.4 A, -60 V, 55 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -30V, 4.6A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 61A, 1206
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 18A, POWERPAK 1212-8
(EN)
