产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 53 A, -60 V, 19.5 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 250 V, 0.28 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -200 V, 500 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.2A, 200V, PowerPAK SO
(EN)
VISHAY
晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.014 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 500 V, 230 mohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, 30V, 47A, SON-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -28 A, -30 V, 0.0052 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -5.9 A, -100 V, 150 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.5 A, 30 V, 0.033 ohm, 4.5 V, 650 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 700 mA, 60 V, 2 ohm, 10 V, 2.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 480 mA, -240 V, 11 ohm, -10 V, -1.4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.052 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)
