产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
MICROCHIP
晶体管, MOSFET, N沟道, 30 mA, 500 V, 850 ohm, 0 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, -3.6A, TO-252-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 7 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 0.0195 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 10.5 A, -40 V, 15 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -200 V, 500 mohm, -10 V, -4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 180 A, 100 V, 8 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 39 A, 40 V, 0.005 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 2.6 A, 200 V, 1.08 ohm, 4.5 V, 1.4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 17 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 250V, 8.1A TO-220
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 200 mA, 450 V, 20 ohm, 0 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 24 A, 500 V, 0.16 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 5.3 A, -20 V, 60 mohm, -10 V, -2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 190 mohm, 10 V, 3 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 15 A, 500 V, 330 mohm, 10 V, 4 V
(EN)
