产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 200 V, 40 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 400 V, 1.47 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 10 mohm, -10 V, -1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40V, 60A, POWERPAKSO-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 490 mohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -45 A, -30 V, 0.0072 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 3.5 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -300 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.9 A, 30 V, 20 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3.6 A, -20 V, 90 mohm, -10 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.018 ohm, -4.5 V, -1 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 175 mA, 300 V, 12 ohm, 0 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 47 A, 500 V, 78 mohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V
(EN)
