产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ROHM
晶体管, MOSFET, N沟道, 12 A, 250 V, 0.18 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 22 A, 250 V, 0.105 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.045 ohm, 4.5 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.54 ohm, 10 V, 5.25 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0033Ω, 100A, TO-220-3
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 5 ohm, 5 V, 2 V
(EN)
VISHAY
场效应管, MOSFET
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 1 ohm, 10 V, 3.75 V
(EN)ROHM
晶体管, MOSFET, N沟道, 20 A, 200 V, 0.1 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 21 A, 30 V, 0.0089 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0033 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.5 A, -30 V, 0.115 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4 A, 45 V, 0.038 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00078 ohm, 10 V, 2.2 V
(EN)ROHM
晶体管, MOSFET, P沟道, -14 A, -60 V, 0.06 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 33 mohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -550 mV
(EN)ROHM
晶体管, MOSFET, N沟道, 3 A, 200 V, 0.62 ohm, 10 V, 5.2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 6 A, 60 V, 0.046 ohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 60A, POWERPAK SO-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, -190 mA, -250 V, 7.7 ohm, -10 V, -1.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 16 A, 200 V, 0.135 ohm, 10 V, 5.25 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 20 V, 0.008 ohm, 4.5 V, 1 V
(EN)
