产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.044 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -4.5 A, -45 V, 0.11 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO220AB-3
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
(EN)
MULTICOMP
场效应管, MOSFET, P沟道, -50V, 1.2Ω, -130mA, SOT-23-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 500 mA, 350 V, 17 ohm, 0 V
ROHM
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0066 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 500 V, 380 mohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -45 V, 0.13 ohm, -10 V, -3 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 16 A, -160 V, 750 mohm, -1.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0129 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.095 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 0.12 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 1.6 A, 45 V, 0.14 ohm, 4.5 V, 1.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.216 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.07 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.75 A, -200 V, 3 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 50 mA, -40 V, 180 ohm, -20 V, -2.5 V
(EN)
