产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14.5 A, -30 V, 0.0065 ohm, -10 V, -1.9 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -15 A, -100 V, 0.085 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 4 mohm, 10 V, 1.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 70 V, 100 mohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 15A, SOIC
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0028 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.002 ohm, 10 V, 2.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.9 A, 100 V, 26 mohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 190 V, 0.13 ohm, 10 V, 2.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 26 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 11 A, 60 V, 0.008 ohm, 10 V, 3 V
(EN)
