产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
DIODES INC.
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 45 mohm, -4.5 V, -500 mV
(EN)
MICROCHIP
MOSFET, N CHANNEL, 500V, 0.013A, TO-236AB-3
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 255 mA, 20 V, 1.6 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 240 mA, 60 V, 1 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.2 A, 30 V, 0.015 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
(EN)VISHAY
MOSFET, N CHANNEL, 30V, 3.6A, SOT-23-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.2 A, 150 V, 0.112 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 270 mA, 60 V, 7.5 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 3.5A SOT-23
(EN)VISHAY
晶体管, P沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 240V, 200mA, TO-236
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.00115 ohm, 10 V, 2.1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.00115 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 540 mA, 55 V, 0.346 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 10.4 A, 30 V, 0.0165 ohm, 10 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 2.9A, MICRO FOOT-4
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 400 mA, 30 V, 700 mohm, 10 V, 1.8 V
(EN)
