产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道+肖特基, 7.3 A, 30 V, 0.013 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.0169 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -16 A, -45 V, 0.035 ohm, -10 V, -3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.08 ohm, -10 V, -2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 140 A, 200 V, 0.01 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 0.095 ohm, -10 V, -2.6 V
(EN)ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 21.5A, SOIC-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.36 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.6 A, 60 V, 0.0094 ohm, 20 V, 3.2 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 44 A, 500 V, 140 mohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.4 ohm, 4.5 V, 1.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.057 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
(EN)
