产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
MOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 170 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 21 A, 500 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, BRT, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0018 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 34A, SOIC-8
(EN)
VISHAY
晶体管, N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 500 V, 340 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.1 A, 200 V, 80 mohm, 10 V, 4.9 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 11 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 3.7 A, -70 V, 160 mohm, 10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 52 A, 300 V, 60 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 90 A, 250 V, 33 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -130 mA, -50 V, 1.2 ohm, -5 V, -1.7 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0082OHM, 9A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 380 mA, 500 V, 4.6 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.1 A, 30 V, 0.0207 ohm, 10 V, 2 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 40 A, 500 V, 170 mohm, 10 V, 2.5 V
(EN)
