产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.6 A, 200 V, 0.1 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.029 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 2A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 2.6 A, -30 V, 110 mohm, 10 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 0.039 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 0.055 ohm, 4.5 V, 900 mV
(EN)MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-23-3
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 12A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 60 V, 0.006 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 40 V, 8.5 mohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
NEXPERIA
场效应管, MOSFET, N沟道, 30V, 1.9A, 3-SOT-23, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.088 ohm, -4.5 V, -800 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 5 ohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -40 V, 10.1 mohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 500 V, 850 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
