产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N沟道, 40V, 3.9A, TO-236, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.0058 ohm, 10 V, 2 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 50V, 200mA SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.5 A, -200 V, 800 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -200V, 6.5A, TO-204AA
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -3.1A, TO-252-3
(EN)
NTE ELECTRONICS
场效应管, MOSFET
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 380 mA, 60 V, 1.19 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.044 ohm, -10 V, -1.8 V
(EN)
VISHAY
场效应管, P通道, MOSFET, -150V, 690MA, TO-236
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 4.6 mohm, -10 V, -1.8 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 300 V, 22 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -32 A, -40 V, 0.023 ohm, -10 V, -1.6 V
(EN)VISHAY
场效应管, N通道, MOSFET, 整卷
(EN)
VISHAY
场效应管, P通道, MOSFET, -60V, 19A, TO-252, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -25V, 460mA, SOT-23, 整卷
(EN)
