产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N通道, 20V, 0.045Ω, 2.6A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 850 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 6A, SOT-223, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 900mA, SOT-23, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 79 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.0056 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.85 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 5.2A D2-PAK
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, 50 A, -30 V, 25 mohm, 5 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, -1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -150 V, 0.61 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 0.082 ohm, -10 V, -1.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 3A, TO-236, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -1.3A, SuperSOT, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 1A, SuperSOT, 整卷
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 115mA SOT-23, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 280mA, SOT-23, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -100V, 28A, SOIC, 整卷
(EN)
