产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 150°C,
NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.5 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
场效应管, MOSFET, N沟道, 500V, 12A, TO-204AA
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -120 mA, -25 V, 7.9 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 40 V, 0.009 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 55 V, 45 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV
(EN)
VISHAY
场效应管, P通道, MOSFET, 整卷
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)
MULTICOMP
场效应管, MOSFET, P沟道, -50V, 1.2Ω, -130mA, SOT-23-3
(EN)
MICRO COMMERCIAL COMPONENTS
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-23, 整卷
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5A, SOT-223, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -60A, PowerPAKSO, 整卷
(EN)
VISHAY
场效应管, MOSFET
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 0.051Ω, -3.2A, POWERPAK SO, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.122 ohm, -4.5 V, -900 mV
(EN)
INFINEON
场效应管, N通道, MOSFET, 30V, 3.4A, 3-SOT-23, 整卷
(EN)
