产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0024 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 28 mohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 11A TO-251AA
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.008 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 14A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0011 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 40 V, 0.01 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 429 A, 24 V, 800 μohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 30 V, 0.0082 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 96 A, 100 V, 0.008 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 35 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 0.0052 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 60 V, 200 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 39 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 107 A, 40 V, 0.0025 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 31A, D2-PAK
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V
(EN)
