产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 22 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 57 A, 100 V, 23 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.022 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 68 A, 60 V, 0.0055 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.031 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.1 ohm, 5 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 87 A, 60 V, 0.00527 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0103 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 75 V, 3.3 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 55 A, 25 V, 0.00755 ohm, 10 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 48.2 A, 75 V, 0.0147 ohm, 10 V, 1.65 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 60 V, 20 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 18A, D2-PAK
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00096 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 105 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 35.3 A, 40 V, 0.02 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 75 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.7 A, 60 V, 0.042 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)
