产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 25 V, 0.00245 ohm, 10 V, 1.74 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 13.8 mohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, D2-PAK
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 94A, TO-247AC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 130 A, 75 V, 7.8 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 75mA
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 102 A, 30 V, 0.0029 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0037 ohm, -10 V, -1.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 30A, TO-247AC
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 43A, TO-247AC
(EN)INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0029 ohm, -10 V, -1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0075 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 160 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 30 V, 50 mohm, 16 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 13.5 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0021 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.015 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 55 V, 68 mohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.0035 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 53 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
(EN)
