产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.04 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0065 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.00436 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 80 V, 13.7 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 295 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 20 A, 60 V, 37.5 mohm, 10 V, 2.91 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 95 A, 200 V, 0.0127 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 98 A, 55 V, 8 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 1.3A
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 0.075 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 47A TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 156 A, 30 V, 0.0034 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 51 A, 100 V, 12.7 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -120 A, -60 V, 0.0056 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -60 V, 0.2 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0036 ohm, 10 V, 4 V
(EN)
