产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0099 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 55 V, 16 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0033 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 55 V, 70 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 79 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 460 A, 40 V, 0.0006 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.034 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.23 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.107 ohm, 5 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0032 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -150V, -150A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0056 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 26 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
