产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.015 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 80 V, 20 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 375A, 直接FET, L8-11
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 24 A, 100 V, 0.026 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -38 A, -100 V, 0.036 ohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 100 V, 6400 μohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 13 A, -100 V, 200 mohm, -10 V, -4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 48 A, 30 V, 7.6 mohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -60 V, 280 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 12 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0103 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.0073 ohm, -10 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 1.41 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 187 A, 40 V, 0.0016 ohm, 10 V, 3.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 250 V, 0.032 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 375 A, 40 V, 0.0007 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
(EN)
