产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -47 A, -60 V, 0.021 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 55 V, 0.011 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0017 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 140 A, 100 V, 0.0056 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0068 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 105 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 56 A, 100 V, 0.014 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17.5 A, 60 V, 14 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 195 A, 40 V, 1.75 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 100 V, 28.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0076 ohm, -10 V, -1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 161A, D-PAK
(EN)
