产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0095 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 250 V, 0.0145 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00179 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0115 ohm, 10 V, 2.85 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, TO-220-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 4.3 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 74 A, 75 V, 9.3 mohm, 10 V, 2.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.00245 ohm, 10 V, 1.78 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 63 A, 60 V, 0.0102 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 42 A, 100 V, 21.4 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 0.005 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 4.1 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 74A, D2-PAK
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 4.5 V, 2.5 V
(EN)
