产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -100V, 40A D2-PAK
(EN)
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 78 A, 150 V, 12 mohm, 10 V, 5 V
(EN)
VISHAY
场效应管, P通道, MOSFET, -100V, 19A D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.001 ohm, 4.5 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 52A TO-220FP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0032Ω, 160A, TO-252AA-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 150 V, 33 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.04 ohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 0.0082 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 44 A, 300 V, 38 mohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0059 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0033 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 172A, TO-247AC-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 12A, DPAK-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 42A, D-PAKS
