产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
VISHAY
MOSFET, N CHANNEL, 60V, 110A, TO-263-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 150 A, 55 V, 4.9 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 55 V, 14 mohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 120 V, 13 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0028 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 7340 μohm, 10 V, 2 V
(EN)INFINEON
MOSFET, N-CH, 75V, 195A, TO-220AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 20 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0034 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 130 A, 60 V, 0.006 ohm, 10 V, 4 V
(EN)INFINEON
MOSFET, N-CH, 75V, 87A, TO-220AB-3
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
