产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
VISHAY
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00121 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.056 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.042 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, HEXDIP
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 150 V, 180 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 60 V, 6.5 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 75 V, 3.4 mohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 55V, 20A
(EN)INFINEON
晶体管, MOSFET, N沟道, 87 A, 75 V, 0.006 ohm, 10 V, 3.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.00445 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 5.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 40 V, 3.6 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 22 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0218 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 4.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 8 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 104A, D2-PAK
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 75 V, 7.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 75A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 24.5 mohm, 10 V, 4 V
(EN)
