产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 A, 75 V, 0.0016 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 75 V, 9.4 mohm, 10 V, 4 V
(EN)
NEXPERIA
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.1 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 55 V, 0.14 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0031 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 140 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 300 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 7.34 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.034 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, 汽车, N沟道, 200 A, 40 V, 3.1 mohm, 10 V, 2.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 55 V, 0.002 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.034 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 75A, TO-247
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 180A, TO-220AB
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13.5 A, -20 V, 0.0067 ohm, -4.5 V, -600 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 55 V, 2.6 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0107 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 0.04 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)
