产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 17A, IPAK
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 28.1 A, 100 V, 30.8 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 40 V, 4.4 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.0345 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 150 A, 80 V, 0.0024 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0066 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.00605 ohm, 10 V, 1.75 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -40 V, 0.0058 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.118 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0021 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00085 ohm, 10 V, 1.41 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 75 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00125 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 19 A, 55 V, 0.047 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0159 ohm, 10 V, 1.6 V
INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0062 ohm, 10 V, 1.7 V
(EN)
