产品分类：场效应管MOSFET晶体管(600V以下),规格：工作温度最高值 175°C,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0037 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 75 V, 0.0035 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 19 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 25 V, 0.0044 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 280 A, 24 V, 0.0008 ohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 100 V, 9 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 75 V, 3.5 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 20 V, 8.5 mohm, 4.5 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 96 A, 60 V, 0.0061 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0028 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 70 A, 30 V, 7.6 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.015 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.015 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 200 V, 0.0138 ohm, 10 V, 4 V
(EN)
