产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 110W,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 60 V, 15 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.29 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0071 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 55 V, 0.0111 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 60V, 79A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 0.06 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.00155 ohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 75V, 42A, D-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 55 V, 0.0111 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 55V, 59A, D-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 4 V
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)INFINEON
场效应管, MOSFET, P沟道
(EN)INFINEON
场效应管, MOSFET, P沟道, -55V, 31A, D-PAK, 整卷
(EN)
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 49 A, 55 V, 17.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 0.022 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 490 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 60 V, 15 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 55 V, 12 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 32 A, 55 V, 6.5 ohm, 10 V, 4 V
(EN)
